Once the dawn of semiconductors — now the light of the photonic age
Germanium (Ge) marked the beginning of the semiconductor revolution — powering the world’s first transistor in 1947. Though it was soon overtaken by silicon (Si) for its scalability and manufacturability, Si’s weak interaction with light constrained its use in photonics, leading to dependence on costly III–V materials for optical and high-speed applications.
At Artilux, we revisit germanium not as a chapter of history, but as a foundation for the future. Through advanced heterogeneous material engineering, nanoscale electro-optical field control, and wafer-level photonic–electronic co-integration, Artilux unites Ge’s exceptional optoelectronic properties with silicon’s CMOS scalability. The result is a GeSi photonic platform that delivers high performance, low power consumption, and volume manufacturability — redefining the very boundaries of modern photonics.
Stage of development in semiconductor materials
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1stGeneration
Silicon (Si) and other basic functional materials
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2ndGeneration
Predominately represented by Gallium Arsenide (GaAs), Indium Phosphide (InP) as well as certain group III-V compounds
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3rdGeneration
Silicon Carbide (SiC), Gallium Nitride (GaN) etc. high bandgap materials
Uniting the spectrum of innovation — the power of GeSi photonics
At the core of Artilux’s technology lies its proprietary germanium silicon (GeSi) photonic platform, engineered to overcome the inherent trade-offs of conventional silicon and III–V materials. By embedding germanium into standard silicon CMOS processes, Artilux enables large-scale, high-speed, and ultra-sensitive, down to single photon level, detection and modulation across a broad optical spectrum.
Key Advantages
- Ultra-high sensitivity — Achieving up to 1,000× lower dark current than prior generations for unparalleled precision and energy efficiency.
- Broad spectral coverage — Operating from visible to NIR and SWIR, enabling advanced sensing, imaging, and communication applications.
- High bandwidth and low latency — Tailored for AI, cloud, and edge computing workloads that demand both speed and efficiency.
- CMOS-ready scalability — Fully compatible with high-volume foundry production, ensuring cost efficiency and commercial viability.
This platform forms the technological foundation for next-generation biosensing, high-density optical interconnect fabrics, and photonic computing — extending the reach of light into every layer of intelligent systems.